2SC3041

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Fast switching speed ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC3041 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ PW≤300μs,Duty cycle≤10% Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 8 16 3 90 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA ;RBE=∞ IC=1mA; IE=0 IE=1mA; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=400V; IE=0 VEB=5V; IC=0 IC=0.8A ; VCE=5V IC=4A ; VCE=5V IC=0.8A ; VCE=10V IE=0; VCB=10V,f=1MHz 15 8 20 80 MIN 400 500 7 TYP. 2SC3041 MAX UNIT V V V 1.0 1.5 10 10 V V μA μA MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3041 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3