Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3042
DESCRIPTION ・With TO-3PN package ・High breakdown voltage (VCBO≥500V) ・Fast switching speed ・Wide ASO(Safe Operating Area) APPLICATIONS ・400V/12A switching regulator applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PN) and symbol Emitter DESCRIPTION
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 100 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 12 25 4 2.5 W UNIT V V V A A A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE -2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=8A ;IB=1.6A IC=8A ;IB=1.6A VCB=400V ;IE=0 VEB=5V; IC=0 IC=1.6A ; VCE=5V IC=8A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=1.6A ; VCE=10V 15 8 MIN 400 500 7
2SC3042
TYP.
MAX
UNIT V V V
1.0 1.5 10 10 50
V V μA μA
160 20
pF MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=10A; IB1=-IB2=2A RL=20Ω,VCC=200V 1.0 2.5 1.0 μs μs μs
hFE-1 classifications L 15-30 M 20-40 N 30-50
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3042
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3042
4
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