2SC3047

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3047 DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 850 500 10 6 2 40 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3047 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 850 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.2 V ICBO Collector cut-off current VCB=850V ;IE=0 1 mA IEBO Emitter cut-off current VEB=10V; IC=0 1 mA hFE DC current gain IC=0.5 A ; VCE=5V 15 Switching times μs μs μs ton Turn-on time IC=1A; IB1=0.1A IB2=-0.2A;RL=300Ω 1.0 ts Storage time 3.0 tf Fall time 1.0 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3047 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3