2SC3060

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Ultra-fast switching ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic oscillators ·Class C and D amplifiers ·Deflection circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC3060 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ PW≤25μs,Duty cycle≤50% Open emitter Open base Open collector CONDITIONS VALUE 1200 850 7 5 8 3 150 175 -65~175 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=10mA ;RBE=∞ IC=1mA; IE=0 IE=1mA; IC=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=1000V; IE=0 ICBO Collector cut-off current VCB=1000V; IE=0, TC=100℃ IEBO hFE fT Cob Emitter cut-off current DC current gain Transition frequency Output capacitance VEB=6V; IC=0 IC=2A ; VCE=5V IC=0.5A ; VCE=10V IE=0; VCB=10V,f=1MHz 10 15 120 MIN 850 1200 7 TYP. 2SC3060 MAX UNIT V V V 1.5 2.0 100 1 100 30 V V μA mA μA MHz pF Switching times tr tstg tf Rise time Storage time Fall time VCC=400V; IC=2A IB1=0.2A;IB2=-0.6A; 0.5 3.5 0.3 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3060 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3