2SC3083

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3083 DESCRIPTION ・With TO-3PN package ・High breakdown voltage (VCBO≥500V) ・Fast switching speed ・Wide ASO（Safe Operating Area） APPLICATIONS ・400V/6A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 60 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 6 12 2 2.5 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE -2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=400V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=5V IC=2A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.4A ; VCE=10V 15 8 MIN 400 500 7 2SC3083 TYP. MAX UNIT V V V 1.0 1.5 10 10 50 V V μA μA 40 20 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=3A ;IB1=-IB2=0.6A RL=66.6Ω,VCC=200V 1.0 2.5 1.0 μs μs μs hFE-1 classifications L 15-30 M 20-40 N 30-50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3083 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3083 4