2SC3090

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3090 DESCRIPTION ・With TO-3PN package ・High breakdown voltage (VCBO≥800V) ・Fast switching speed ・Wide ASO（Safe Operating Area） APPLICATIONS ・500V/10A Switching Regulator Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 100 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 800 500 7 10 20 4 2.5 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE -2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=500V; IE=0 VEB=5V; IC=0 IC=1.2A ; VCE=5V IC=6A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=1.2A ; VCE=10V 15 8 MIN 500 800 7 2SC3090 TYP. MAX UNIT V V V 1.0 1.5 10 10 50 V V μA μA 160 18 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=7A; IB1=-IB2=1.4A RL=28.6Ω,VCC=200V 1.0 3.0 1.0 μs μs μs hFE-1 classifications L 15-30 M 20-40 N 30-50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3090 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3090 4