2SC3110

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3110 DESCRIPTION ·Low Noise ·High Gain ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in RF wide band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 30 mA ICP Collector Current-Peak 50 mA PC Collector Power Dissipation @TC=25℃ 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3110 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 1 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 40 fT Current-Gain—Bandwidth Product IE= -10mA ; VCE= 10V 4.5 GHz COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 1.2 pF ︱S21e︱2 Insertion Power Gain IC= 20mA; VCE= 10V; f= 0.8GHz 9 12 dB GUM Power Gain 12 14 dB NF Noise Figure IC= 5mA; VCE= 10V; f= 0.8GHz 1.3 2.5 dB isc Website：www.iscsemi.cn 2