2SC3125

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3125 DESCRIPTION ·Good Linearity of fT APPLICATIONS ·Designed for TV Final Picture IF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 50 mA IB B Base Current-Continuous 25 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3125 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 25 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 20 200 VCE(sat) Collector-Emitter Saturation Voltage IC= 15mA ; IB= 1.5mA 0.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 15mA ; IB= 1.5mA 1.5 V COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 1.1 1.6 pF rbb’ • CC Base Time Constant IC= 1mA ; VCB= 10V; f= 30MHz 25 ps fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 250 600 MHz isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3125 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3125 isc Website：www.iscsemi.cn 4