2SC3127

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3127 DESCRIPTION ·Low Noise and High Gain NF = 2.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3127 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 20 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 12 V ICBO Collector Cutoff Current VCB= 12V; IE= 0 0.5 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 10 μA hFE DC Current Gain IC= 20mA ; VCE= 5V 30 200 fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V 3.5 4.5 GHz COB Output Capacitance IE= 0 ; VCB= 5V;f= 1.0MHz 0.9 1.5 pF PG Power Gain IC= 20mA ; VCE= 5V;f= 900MHz 10.5 dB NF Noise Figure IC= 5mA ; VCE= 5V;f= 900MHz 2.2 dB isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3127 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3127 isc Website：www.iscsemi.cn 4 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3127 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3127 isc Website：www.iscsemi.cn 6