2SC3148

2SC3148

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SC3148 - Silicon NPN Power Transistors - Inchange Semiconductor Company Limited

  • 详情介绍
  • 数据手册
  • 价格&库存
2SC3148 数据手册
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・High collector breakdown voltage: VCEO=800V(Min) ・Excellent switching time: tr=1.0μs(Max.) tf=1.0μs(Max.@IC=0.8A APPLICATIONS ・Switching regulator and high voltage switching applications ・High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3148 ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 3 5 1 1.5 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC3148 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 900 V VCEsat Collector-emitter saturation voltage IC=0.8A; IB=0.16A 0.6 V VBEsat Base-emitter saturation voltage IC=0.8A; IB=0.16A 1.2 V μA ICBO Collector cut-off current VCB=800V ;IE=0 100 IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE DC current gain IC=0.8A ; VCE=5V 10 Switching times μs μs μs tr Rise time VCC≈400V; IC=0.8A IB1=0.08A;IB2=-0.20A; RL=50Ω;Duty cycle≤1% 1.0 tstg Storage time 4.0 tf Fall time 1.0 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3148 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3148 4
2SC3148
1. 物料型号: - 型号为2SC3148,由Inchange Semiconductor生产的Silicon NPN Power Transistors。

2. 器件简介: - 2SC3148是一款硅NPN功率晶体管,采用TO-220C封装,具有800V的高集电极击穿电压和优秀的开关时间特性,具体为tr=1.0μs(最大值)和t4=1.0μs(最大值,@ I_C=0.8 A)。

3. 引脚分配: - 1号引脚为基极(Base), - 2号引脚为集电极(Collector; connected to mounting base), - 3号引脚为发射极(Emitter)。

4. 参数特性: - 绝对最大额定值包括:V_CBO(Collector-base voltage Open emitter)为900V,V_CEO(Collector-emitter voltage Open base)为800V,V_EBO(Emitter-base voltage Open collector)为7V,I_C(Collector current)为3A,I_CM(Collector current-peak)为5A,I_B(Base current)为1A,P_C(Collector dissipation)为40W,T_j(Junction temperature)为150℃,T_stg(Storage temperature)为-55~150℃。

5. 功能详解: - 2SC3148适用于开关稳压器和高压开关应用、高速DC-DC转换器应用,具有较低的饱和集电极-发射极电压VCEsat(0.6V @ IC=0.8A; IB=0.16A)和基极-发射极饱和电压VBEsat(1.2V @ IC=0.8A; IB=0.16A)。

6. 应用信息: - 主要应用于开关稳压器和高压开关应用、高速DC-DC转换器应用。

7. 封装信息: - 封装类型为TO-220C,具体外形尺寸见图1(简化外形图和符号)和图2(外形尺寸图),未标明的公差为±0.10mm。
2SC3148 价格&库存

很抱歉,暂时无法提供与“2SC3148”相匹配的价格&库存,您可以联系我们找货

免费人工找货