2SC3150

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3150 DESCRIPTION ·High Breakdown Voltage: V(BR)CBO= 900V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 1.5 A PC 50 W ℃ TJ 150 Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEO(SUS) V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 5mA; RBE= ∞ IC= 3A; L= 500μH, IB= 1A IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 1.5A; IB= 0.3A IC= 1.5A; IB= 0.3A VCB= 800V; IE=0 VEB= 5V; IC=0 IC= 0.2A ; VCE= 5V IC= 1A ; VCE= 5V IE= 0 ; VCB= 10V; ftest=1.0MHz IC= 0.2A ; VCE= 10V 10 8 60 15 MIN 800 800 900 7 2SC3150 TYP. MAX UNIT V V V V 2.0 1.5 10 10 40 V V μA μA pF MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 2A , IB1= 0.4A; IB2= -0.8A RL= 200Ω; VCC=400V 1.0 3.0 0.7 μs μs μs hFE-1 Classifications K 10-20 L 15-30 M 20-40 isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3150 isc Website：www.iscsemi.cn