2SC3153

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3153 DESCRIPTION ・With TO-3PN package ・High breakdown voltage (VCBO≥900V) ・Fast switching speed ・Wide ASO（Safe Operating Area） APPLICATIONS ・800V/6A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 6 20 3 100 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE -2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.6A IC=3A ;IB=0.6A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=5V IC=2A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.4A ; VCE=10V 10 8 120 15 MIN 800 900 7 2SC3153 TYP. MAX UNIT V V V 2.0 1.5 10 10 40 V V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=4A;IB1=0.8A;IB2=-1.6A RL=100Ω,VCC=400V 1.0 3.0 0.7 μs μs μs hFE-1 classifications K 10-20 L 15-30 M 20-40 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3153 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3153 4