2SC3156

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage : VCBO=900V(Min) ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC3156 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ PW≤300μs, Duty Cycle≤10% Open emitter Open base Open collector CONDITIONS VALUE 900 800 7 6 20 3 120 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ; RBE=∞ IC=1mA ; IE=0 IE=1mA ; IC=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=5V IC=2A ; VCE=5V IE=0 ; VCB=10V, f=1MHz IC=0.4A ; VCE=10V 10 8 120 15 MIN 800 900 7 TYP. 2SC3156 MAX UNIT V V V 2.0 1.5 10 10 V V μA μA pF MHz Switching times Turn-on time Storage time Fall time IC=4A; IB1=0.8A;IB2=-1.6A VCC=400V ,RL=100Ω 1.0 2.5 0.7 μs μs μs ton ts tf 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3156 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3