2SC3157

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3157 DESCRIPTION ・With TO-220 package ・High switching speed ・Low collector saturation voltage ・Complement to type 2SA1261 APPLICATIONS ・For high voltage ,high speed and power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Ta=25℃ PT Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 60 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 150 100 7 10 20 3.5 1.5 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3157 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=5A ;IB1=0.5A;L=1mH IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=100V; IE=0 VCE=100V; VBE=1.5V Ta=125℃ VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=5A ; VCE=5V 40 40 20 200 MIN 100 0.6 1.5 0.01 0.01 1.0 0.01 TYP. MAX UNIT V V V mA mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=5A;IB1=-IB2=0.5A , RL=10Ω;VCC≈50V 0.5 1.5 0.5 μs μs μs hFE-2 classifications M 40-80 L 60-120 K 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3157 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3