2SC3179

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3179 DESCRIPTION ·With TO-220 package ·Complement to type 2SA1262 ·Low collector saturation voltage APPLICATIONS ·Audio and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 80 60 6 4 1 30 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=25mA ,IB=0 IC=2A; IB=0.2 A VCB=80V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=4V IE=-0.2A ; VCE=12V f=1MHz ; VCB=10V 40 15 60 MIN 60 TYP. 2SC3179 MAX UNIT V 0.6 100 100 V μA μA MHz pF Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=2A IB1=-IB2=0.2A RL=10Ω;VCC=20V 0.2 1.9 0.29 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3179 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3