2SC3182N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3182N DESCRIPTION ・With TO-3P(I) package ・Complement to type 2SA1265N APPLICATIONS ・Power amplifier applications ・Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 140 140 5 10 1 100 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=7A; IB=0.7A IC=5A ; VCE=5V VCB=140V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=5V IE=0 ; VCB=10V ;f=1MHz 55 35 MIN 140 2SC3182N TYP. MAX UNIT V 2.0 1.5 5 5 160 V V μA μA 30 220 MHz pF hFE-1 Classifications R 55-110 O 80-160 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3182N Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3182N 4