2SC3211

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC3211 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 3 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 800 500 8 5 10 3 70 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;L=25mH IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 3 MIN 500 TYP. 2SC3211 MAX UNIT V 1.0 1.5 0.1 0.1 V V mA mA MHz Switching times Turn-on time Storage time Fall time IC=3A; IB1=-IB2=0.6A VCC=200V 1.0 3.0 1.0 μs μs μs ton ts tf 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3211 Fig.2 outline dimensions (unindicated tolerance:±0.3mm) 3