2SC3212

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION ・With TO-3PFa package ・Low collector saturation voltage ・High VCBO ・High speed switching APPLICATIONS ・For high speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SC3212 VCBO Collector-base voltage 2SC3212A VCEO VEBO IC ICM IB Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 3 150 -55~150 ℃ ℃ Open base Open collector Open emitter 900 500 8 7 15 4 100 W V V A A A CONDITIONS VALUE 800 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC3212 ICBO Collector cut-off current 2SC3212A IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A;L=25mH IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V; IE=0 100 VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 15 8 3.5 MHz 100 μA μA MIN 500 1.0 1.5 TYP. MAX UNIT V V V Switching times 2SC3212 ton Turn-on time 2SC3212A tstg Storage time 2SC3212 tf Fall time 2SC3212A 1.2 IC=5A; VCC=200V IB1=-IB2=1A 1.2 2.5 1.0 μs μs 1.0 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3212 2SC3212A Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3