2SC3214

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3214 DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1200 800 7 5 8 3 80 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3214 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 1200 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V μA μA ICBO Collector cut-off current VCB=960V; IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE DC current gain IC=1.5A ; VCE=5V 10 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3214 Fig.2 Outline dimensions 3