2SC3220

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3220 DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage · PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 230 230 7 10 4 80 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.56 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3220 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 230 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.5A 1.5 V ICBO Collector cut-off current At rated voltage 0.1 mA ICEO Collector cut-off current IEBO Emitter cut-off current At rated voltage 0.1 mA hFE-1 DC current gain IC=10A ; VCE=2V 15 hFE-2 DC current gain IC=1mA ; VCE=2V 5 fT Transition frequency IC=0.6A ; VCE=10V 20 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3220 Fig.2 Outline dimensions 3