2SC3235

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3235 DESCRIPTION ·With TO-220 package ·High voltage,high speed ·Low saturation voltage APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 2 4 20 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA; IB=0 IC=1mA; IE=0 IE=1mA; IC=0 IC=1A; IB=0.2 A IC=1A; IB=0.2 A VCB=400V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V 20 MIN 400 500 7 TYP. 2SC3235 MAX UNIT V V V 1.0 1.5 10 10 50 V V μA μA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3235 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3