2SC3252

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3252 DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1288 APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters, converters ·Power amplifier ·Switching regulator, dirver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC ICM Collector Current-Continuous 3 A Collector Current-Pulse Collector Power Dissipation @ TC=25℃ Junction Temperature 5 A PC 30 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) ICBO IEBO hFE fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 1mA; RBE= ∞ IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 1.5A; IB= 75mA VCB= 40V; IE= 0 VEB= 4V; IC= 0 IC= 1A; VCE= 2V IC=1A; VCE= 5V 70 MIN 60 80 5 2SC3252 TYP. MAX UNIT V V V 0.4 100 100 280 100 V μA μA MHz hFE Classifications Q 70-140 R 100-200 S 140-280 isc Website：www.iscsemi.cn 2