2SC3253

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Short switching time ·Low collector saturation voltage ·Complement to type 2SA1289 APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters,converters ·Power amplifier ·Switching regulator ,driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3253 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 80 60 5 5 7 30 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=1mA ,RBE=∞ IC=1mA ,IE=0 IE=1mA ,IC=0 IC=2.5A; IB=0.125A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=1A ; VCE=5V 70 MIN 60 80 5 2SC3253 TYP. MAX UNIT V V V 0.4 100 100 280 100 V μA μA MHz hFE Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3253 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3253 4