2SC3256

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Fast switching speed ·Low saturation voltage APPLICATIONS ·60V/15A High-Speed Switching Applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3256 Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 80 60 5 15 20 80 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=∞ IC=1mA; IE=0 IE=1mA; IC=0 IC=7.5A; IB=0.375A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=1A ; VCE=5V 70 100 MIN 60 80 5 TYP. 2SC3256 MAX UNIT V V V 0.4 100 100 280 V μA μA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=6A; IB1=0.3A;IB2=-0.3A VCC=20V 0.1 0.5 0.1 μs μs μs hFE Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3256 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3