2SC3258

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3258 DESCRIPTION ·With TO-220 package ·Complement to type 2SA1293 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 80 7 5 8 1 30 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector -emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ,IB=0 IC=3A; IB=0.15A IC=3A; IB=0.15A VCB=100V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=1V IC=3A ; VCE=1V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=4V 70 40 MIN 80 2SC3258 TYP. MAX UNIT V 0.4 1.2 1 1 240 V V μA μA 80 120 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=3.0A IB1=- IB2=0.15A RL=10Ω;VCC≈30V 0.2 1.0 0.1 μs μs μs hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3258 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3258 4