2SC3264

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3264 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= 230V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1295 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 17 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ 5 A PC 200 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3264 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 230 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V ICBO Collector Cutoff Current VCB= 230V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE DC Current Gain IC= 5A; VCE= 4V 50 140 COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz 250 pF fT Current-Gain—Bandwidth Product IE= -2A; VCE= 12V 60 MHz Switching times ton Turn-on Time IC= 5A ,RL= 12Ω, IB1= -IB2= 0.5A,VCC= 60V 0.3 μs tstg Storage Time 2.4 μs tf Fall Time 0.5 μs hFE Classifications O 50-100 Y 70-140 isc Website：www.iscsemi.cn 2