2SC3277

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3277 DESCRIPTION ·With TO-3PN package ·High voltage ,high current ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/10A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 10 20 90 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=6A ;IB=1.2A IC=6A ;IB=1.2A VCB=400V; IE=0 VEB=5V; IC=0 IC=1.2A ; VCE=5V IC=6A ; VCE=5V IC=1.2A ; VCE=10V IE=0 ; VCB=10V;f=1MHz 15 8 MIN 400 500 7 2SC3277 TYP. MAX UNIT V V V 1.0 1.5 10 10 50 V V μA μA 20 120 MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time IC=7A;IB1=-IB2=1.4A RL=28.6Ω,PW=20μs VCC=200V 1.0 2.5 1.0 μs μs μs hFE-1 Classifications L 15-30 M 20-40 N 30-50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3277 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3277 4