2SC3307

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3307 DESCRIPTION ・With TO-3PL package ・Excellent switching times : tr=1.0μs(Max .),tf=1.0μs(Max .)(IC=5A) ・High collector breakdown voltage : VCEO=800V APPLICATIONS ・High speed,high voltage switching applications ・Switching regulator applications ・High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 10 15 3 150 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V ;IE=0 VEB=7V; IC=0 IC=10mA ; VCE=5V IC=5A ; VCE=5V 10 10 MIN 800 900 2SC3307 TYP. MAX UNIT V V 1.0 1.5 100 1 V V μA mA Switching times tr tstg tf Rise time Storage time Fall time IC=1A ; VCC≈400V IB1=-IB2=0.4A 1.0 3.0 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3307 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3307 4