2SC3309

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3309 DESCRIPTION ・With TO-220Fa package ・High collector breakdown voltage ・Excellent switching times APPLICATIONS ・Switching regulators and high voltage switching applications ・High speed DC-DC converter application PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -50~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 2 4 0.5 2.0 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector -base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IE=1mA; IE=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=400V; IE=0 VEB=7V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V 20 8 MIN 400 500 2SC3309 TYP. MAX UNIT V V 1.0 1.5 100 1 V V μA mA Switching times tr ts tf Rise time Storage time Fall time IB1=-IB2=0.08A VCC≈200V;RL=250Ω PW=20μs 1.0 2.5 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3309 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3309 4