2SC3310

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3310 DESCRIPTION ・With TO-220Fa package ・High collector breakdown voltage ・Excellent Switching times APPLICATIONS ・Switching regulator ・High speed DC-DC converter ・High voltage switching PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulse) Base current (DC) Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 5 7 1 2 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3310 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=1mA ;IE=0 IC=10mA ;IB=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=400V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=5V IC=5A ; VCE=5V 12 8 MIN 500 400 1.0 1.5 100 1 TYP. MAX UNIT V V V V μA mA Switching times Rise time Storage time Fall time IC=4A ;IB1=-IB2=0.4A VCC≈200V;RL=10Ω 1.0 2.5 1.0 μs μs μs Tr ts tf 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3310 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3310 4 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3310 5