2SC3320

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3320 DESCRIPTION ・With TO-3PN package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 15 5 80 150 -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth (j-c) PARAMETER Thermal resistance from junction to case VALUE 1.56 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=6A; IB=1.2A IC=6A ;IB=1.2A VCB=500V; IE=0 VEB=7V; IC=0 IC=6A ; VCE=5V 10 MIN 400 500 7 2SC3320 TYP. MAX UNIT V V V 1.0 1.5 1.0 1.0 V V mA mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=7.5A IB1=1.5A IB2=-3A RL=20Ω PW=20μs;Duty=