2SC3345

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3345 DESCRIPTION ・With TO-220 package ・Complement to type 2SA1328 ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 60 50 6 12 2 40 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3345 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA ,IB=0 IC=6A; IB=0.3A IC=6A; IB=0.3A VCB=60V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=1V IC=6A ; VCE=1V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=5V 70 40 180 90 pF MHz MIN 50 0.4 1.2 10 10 240 TYP. MAX UNIT V V V μA μA Switching times ton ts tf Turn-on time Storage time Fall time IC=6.0A IB1=- IB2=0.3A RL=5Ω;VCC=30V 0.2 1.0 0.2 μs μs μs hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3345 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3345 4