2SC3346

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type 2SA1329 ・High speed switching time : tstg=1.0μs(Typ.) ・Low collector saturation voltage : VCE(sat)=0.4V(Max.)@IC=6A APPLICATIONS ・For high current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3346 ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 80 80 6 12 2 40 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ; IB=0 IC=6A; IB=0.3A IC=6A; IB=0.3A VCB=80V ;IE=0 VEB=6V; IC=0 IC=1A ; VCE=1V IC=6A ; VCE=1V IC=1A ; VCE=5V IE=0 ; VCB=10V,f=1MHz 70 40 80 220 MIN 80 0.2 0.9 TYP. 2SC3346 MAX UNIT V 0.4 1.2 10 10 240 V V μA μA MHz pF Switching times Ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=0.3A; RL=5Ω,VCC=30V Pw=20μs ;Duty≤1% 0.2 1.0 0.2 μs μs μs hFE-1 classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3346 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3346 4