2SC3365

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3365 DESCRIPTION ・With TO-3PN package ・High voltage ,high speed APPLICATIONS ・For high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 10 10 20 5 80 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ;RBE=∞,L=100mH IE=10mA ;IC=0 IC=5A; IB=1A IC=5A ;IB=1A VCB=400V; IE=0 VCE=350V; RBE=∞ IC=5A ; VCE=5V IC=10A ; VCE=5V 12 5 MIN 400 10 2SC3365 TYP. MAX UNIT V V 1.0 1.5 50 50 V V μA μA Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=10A; IB1=-IB2=2A VCC≈150V 1.0 2.5 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3365 Fig.2 outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3365 4