2SC3371

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3371 DESCRIPTION ·Collector-Emiiter Sustaining Voltage: VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 8A ·High Speed Switching · APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 5 A PC 200 W Tj 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3371 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 25mH 500 V VCE(sat) VBE(sat) ICBO IEBO Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.0 V Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.5 V Collector Cutoff Current VCB= 800V; IE= 0 VEB= 5V; IC= 0 0.1 mA Emitter Cutoff Current 0.1 mA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 15 hFE-2 DC Current Gain IC= 8A; VCE= 5V 10 Switching Times; Resistive Load μs μs μs ton ts tf Turn-on Time IC= 8A; IB1= -IB2= 1.6A; VCC= 200V 1.0 Storage Time 3.0 Fall Time 1.0 isc Website：www.iscsemi.cn