2SC3376

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3376 DESCRIPTION ·Collector-Emiiter Breakdown Voltage: V(BR)CEO= 800V(Min.) ·High Speed Switching · APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 1 A PC 60 W Tj 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3376 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 0.6 V Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A VCB= 800V; IE= 0 1.2 V Collector Cutoff Current 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.8A; VCE= 5V 10 Switching Times; Resistive Load μs μs μs tr ts tf Rise Time IB1= 0.08A; IB2= -0.2A; VCC≈ 400V; RL= 500Ω 1.0 Storage Time 4.0 Fall Time 1.0 isc Website：www.iscsemi.cn