2SC3388

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3388 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 500V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 10 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3388 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 v VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 15 hFE-2 DC Current Gain IC= 3A; VCE= 5V 8 isc Website：www.iscsemi.cn 2