2SC3409

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3409 DESCRIPTION ・With TO-3PN package ・High breakdown voltage ・Fast switching speed ・Wide area of safe operation APPLICATIONS ・For switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 900 800 10 2 80 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=5mA ;RBE=∞ MIN 2SC3409 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 10 V VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A 5.0 V VBEsat Base-emitter saturation voltage IC=1.5A;IB=0.3A 1.5 V μA μA ICBO Collector cut-off current VCB=800V; IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE DC current gain IC=0.5A ; VCE=4V 15 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3409 Fig.2 outline dimensions 3