2SC3412

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3412 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 500V (Min) ·High Power Dissipation APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature 10 A PC 50 W Tj 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3412 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V ICES Collector Cutoff Current VCE= 1300V; RBE= 0 0.5 mA Switching Times tstg Storage Time IC= 5A; IB1 = 1A 3 μs tf Fall Time 0.2 μs isc Website：www.iscsemi.cn