2SC3416

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3416 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= 200V (Min) ·Complement to Type 2SA1352 APPLICATIONS ·Designed for color TV chroma output, high-voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ 0.2 A 1.2 W PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3416 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA; IE= 0 200 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 20mA; IB= 2mA 1.0 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 μA hFE DC Current Gain IC= 10mA ; VCE= 40V 40 320 fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 30V 70 MHz COB Output Capacitance IE= 0; VCB= 30V; f= 1.0MHz 1.7 pF hFE Classifications C 40-80 D 60-120 E 100-200 F 160-320 isc Website：www.iscsemi.cn 2