2SC3449

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3449 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 3 A PC 80 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 1mA; IE= 0 IC= 5mA; RBE= ∞ IE= 1m A; IC= 0 IC= 3A; IB= 0.6A B 2SC3449 MIN 800 500 7 TYP. MAX UNIT V V V 1.0 1.5 10 10 15 8 18 80 50 V V μA μA IC= 3A; IB= 0.6A B VCB= 500V; IE= 0 VEB= 5V; IC= 0 IC= 0.6A; VCE= 5V IC= 3A; VCE= 5V IC= 0.6A; VCE= 10V IE= 0; VCB= 10V; ftest= 1.0MHz MHz pF Switching Times ton tstg tf Turn-on Time Storage Time Fall Time IC= 4A, IB1= 0.8A; IB2= -1.6A RL= 50Ω; VCC= 200V 0.5 3.0 0.3 μs μs μs hFE-1 Classifications L 15-30 M 20-40 N 30-50 isc Website：www.iscsemi.cn 2