2SC3459

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3459 DESCRIPTION ·High Breakdown Voltage: V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4.5 A ICM Collector Current-Peak 15 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 2 A PC 90 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEO(SUS) V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 5mA; RBE= ∞ IC= 2A; IB1= -IB2= 0.4A; L= 2mH; clamped IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 2A; IB= 0.4A B 2SC3459 MIN 800 800 1100 7 TYP. MAX UNIT V V V V 2.0 1.5 10 10 10 8 90 15 40 V V μA μA IC= 2A; IB= 0.4A B VCB= 800V; IE=0 VEB= 5V; IC=0 IC= 0.3A; VCE= 5V IC= 1.5A; VCE= 5V IE= 0; VCB= 10V; ftest=1.0MHz IC= 0.3A; VCE= 10V pF MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 3A , IB1= 0.6A; IB2= -1.2A RL= 133Ω; VCC=400V 0.5 3.0 0.3 μs μs μs hFE-1 Classifications K 10-20 L 15-30 M 20-40 isc Website：www.iscsemi.cn 2