2SC3475

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3475 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 2A ·High Switching Speed APPLICATIONS ·High speed switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ 1 A 20 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 50mA; IB= 0 IC= 2A; IB= 0.2A B 2SC3475 MIN 60 TYP. MAX UNIT V 0.6 1.5 100 100 60 20 20 70 200 V V μA μA IC= 2A; IB= 0.2A B VCB= 100V; IE= 0 VEB= 7V; IC= 0 IC= 1A; VCE= 4V IC= 4A; VCE= 4V IC= 0.5A; VCE= 4V IE= 0; VCB= 10V; ftest= 1.0MHz MHz pF Switching times ton tstg tf Turn-on Time Storage Time Fall Time IB1= -IB2= 0.2A; RL= 15Ω; VCC= 30V 0.5 2.5 0.5 μs μs μs hFE-1 classifications O 60-120 Y 100-200 isc Website：www.iscsemi.cn 2