2SC3505

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3505 DESCRIPTION ・With TO-3PN package ・High voltage ,high reliability ・High speed switching APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 900 700 10 6 3 80 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IC=2A ;IB=0.4A IC=2A ;IB=0.4A VCB=900V; IE=0 VEB=10V; IC=0 IC=2A ; VCE=5V 10 MIN 700 900 TYP. 2SC3505 MAX UNIT V V 0.5 1.2 1.0 1.0 V V mA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=3A;IB1=0.6A;IB2=-1.2A RL=100Ω,PW=20μs Duty≤2% 1.0 5.0 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3505 Fig.2 outline dimensions 3