2SC3514

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3514 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1383 APPLICATIONS ·Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.1 A Collector Power Dissipation@ Ta=25℃ PC Collector Power Dissipation@TC=25℃ 1.5 W 10 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3514 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 50mA; IB= 5mA 1.5 V ICBO Collector Cutoff Current VCB= 180V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 3.0V; IC=0 1.0 μA hFE-1 DC Current Cain IC= 1mA; VCE= 5V 90 hFE-2 DC Current Cain IC= 10mA; VCE= 5V 100 320 fT Current-Gain—Bandwidth Product IC= 20mA; VCE= 10V 200 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 3.2 pF hFE-2 Classifications Q 100-200 P 160-320 isc Website：www.iscsemi.cn 2