2SC3519

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION ·Collector-Emitter Breakdown VoltageV(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A ·Good Linearity of hFE ·Complement to Type 2SA1386/A APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SC3519 VCBO Collector-Base Voltage 2SC3519A 160 V 180 2SC3519 VCEO Collector-Emitter Voltage 2SC3519A 160 V 180 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 4 A PC 130 W ℃ TJ 150 Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER 2SC3519 V(BR)CEO Collector-Emitter Breakdown Voltage 2SC3519A Collector-Emitter Saturation Voltage 2SC3519 ICBO Collector Cutoff Current 2SC3519A IEBO hFE COB fT Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product VCB= 180V; IE= 0 VEB= 5V; IC= 0 IC= 5A ; VCE= 4V IE= 0; VCB= 10V;ftest= 1.0MHz IE= -2A ; VCE= 12V 50 IC= 5.0A; IB= 0.5A VCB= 160V; IE= 0 IC= 25mA ; IB= 0 180 CONDITIONS MIN 160 2SC3519/A TYP. MAX UNIT V VCE(sat) 2.0 100 V μA 100 100 180 250 50 pF MHz μA Switching Times Turn-on Time Storage Time Fall Time IC= 10A ,RL= 4Ω, IB1= -IB2= 1A,VCC= 40V 0.2 1.3 0.45 μs μs μs ton tstg tf hFE Classifications O 50-100 P 70-140 Y 90-180 isc Website：www.iscsemi.cn 2