2SC3527

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3527 DESCRIPTION ·Low Collector Saturation Voltage ·High Collector Current ·Good Linearity of hFE APPLICATIONS ·Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 25 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ 6 A 100 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 0.5A; L= 25mH IC= 7A; IB= 1.4A B 2SC3527 MIN 400 TYP. MAX UNIT V 1.0 1.5 100 100 15 10 15 V V μA μA IC= 7A; IB= 1.4A B VCB= 500V; IE= 0 VEB= 7V; IC= 0 IC= 2A; VCE= 5V IC= 7A; VCE= 5V IC= 1A; VCE= 10V; f= 1MHz MHz Switching times ton tstg tf Turn-On Time Storage Time Fall Time IC= 7A; IB1= 1.4A, IB2= -1.4A; VCC= 125V 1.0 2.5 1.0 μs μs μs isc Website：www.iscsemi.cn 2