2SC3540

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complement to type 2SA1388 APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3540 · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 100 80 7 5 8 1 2 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3540 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Trainsition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=3A ;IB=0.15A IC=3A ;IB=0.15A VCB=100V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=1V IC=3A ; VCE=1V IC=1A ; VCE=4V IE=0 ; VCE=10V;f=1MHz 70 40 120 80 MHz pF MIN 80 0.2 0.9 0.4 1.2 1 1 240 TYP. MAX UNIT V V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=0.15A VCC≈30V;RL=10Ω 0.2 1.0 0.1 μs μs μs hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3540 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3540 4