2SC3549

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3549 DESCRIPTION ·High Voltage ·High Speed Switching ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solids state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 900 800 10 3 1 40 150 -55~150 UNIT V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 4.16 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 10mA; IB= 0 IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 1A; IB= 0.2A B 2SC3549 MIN 800 900 10 TYP. MAX UNIT V V V 1.0 1.5 1.0 1.0 10 V V mA mA IC= 1A; IB= 0.2A B VCB= 900V; IE= 0 VEB= 10V; IC= 0 IC= 1A ; VCE= 5V Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 2A , IB1= 0.4A; IB2= -0.8A RL=150Ω; PW= 20μs; Duty≤2% 1.0 4.0 0.8 μs μs μs isc Website：www.iscsemi.cn 2