2SC3557

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3557 DESCRIPTION ·With TO-220C package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 80 80 5 4 40 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3557 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=30mA; IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=3A;IB=0.3 A 1.5 V ICEO Collector cut-off current VCE=60V; IB=0 0.5 mA ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=0.2A ; VCE=1V 150 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3557 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3